霍尔芯片关键技术及发展趋势分析
Analysis of the Key Technology and Developing Trend of the Hall Chip
DOI: 10.12677/OJCS.2014.34011, PDF,    国家科技经费支持
作者: 徐文毫, 郭训华, 王国兴：上海交通大学微纳电子学系，上海；陈金玲：威胜集团有限公司，长沙
关键词: 霍尔效应；温度漂移；失调电压；发展趋势；Hall Effect； Temperature Drift； Offset Voltage； Developing Trend
摘要: 本文首先概述了霍尔芯片的分类、应用和市场前景。然后，分析了霍尔芯片的设计难点，并从霍尔盘和信号处理电路两个方面阐述了解决霍尔芯片温度漂移和失调电压的方案，同时也对不同解决方案的进行了对比。基于霍尔芯片的设计难点和应用，总结出霍尔芯片呈现高集成度、低温度性漂移、高灵敏度、低失调电压、新型的霍尔元件结构、微型化等发展趋势。
Abstract: The classification, application and market prospect of the Hall chip are introduced in this paper. The design difficulties are analyzed. The paper presents how to solve the temperature drift and offset voltage of the Hall chips in two aspects of Hall plates and signal processing circuits. Meanwhile, different solutions are also compared. Based on the design difficulties and the application, the developing trends such as high degree of integration, low temperature drift, high sensitivity, low offset voltage, new Hall plate structure and miniaturization are summarized.
文章引用：徐文毫, 郭训华, 王国兴, 陈金玲. 霍尔芯片关键技术及发展趋势分析[J]. 电路与系统, 2014, 3(4): 65-72. https://dx.doi.org/10.12677/OJCS.2014.34011

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