GaAs薄膜发光改性研究进展
Research Progress of Improvement of Emission Properties in GaAs Film
DOI: 10.12677/MS.2018.82011, PDF,    国家自然科学基金支持
作者: 肖 卫, 贾慧民, 唐吉龙, 房 丹, 方 铉, 王新伟, 王登魁, 魏志鹏, 王晓华：长春理工大学高功率半导体激光国家重点实验室，吉林 长春
关键词: GaAs薄膜；光致发光；快速退火；掺杂；表面钝化；GaAs Film； Photoluminescence； Rapid Thermal Annealing； Doping； Surface Passivation
摘要: 砷化镓(GaAs)作为一种重要的III-V族材料。具有电子迁移率高、本征载流子浓度低、发光效率高等特性，广泛应用于半导体光电器件中。对GaAs的发光特性的研究可以为GaAs基半导体光电器件的设计提供重要理论依据，而GaAs发光特性的改善对提高GaAs基器件的性能也尤为重要。文章综述了GaAs薄膜发光特性的国内外研究现状，总结了改善GaAs薄膜发光特性的方法，对促进GaAs薄膜在半导体光电器件的应用具有重要的意义。
Abstract: GaAs, as an important III-V group material, has been applied to various semiconductor photoelec-trical devices for its prominent properties of high carriers mobility, low intrinsic carriers concen-tration, high luminescent efficiency and so on. The exploration of luminescent properties of GaAs can provide physical basis for the design of GaAs based photoelectrical devices. Moreover, how to improve luminescence properties of GaAs also plays a significant role in enhancing the performance of GaAs based devices. In this review, the progress of luminescence properties of GaAs film was briefly introduced. The methods to improve the photoluminescence of GaAs film were expounded. This study is significant for the further application of GaAs film in optoelectronic devices.
文章引用：肖卫, 贾慧民, 唐吉龙, 房丹, 方铉, 王新伟, 王登魁, 魏志鹏, 王晓华. GaAs薄膜发光改性研究进展[J]. 材料科学, 2018, 8(2): 89-97. https://doi.org/10.12677/MS.2018.82011

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