基于ANSYS Workbench半导体激光器封装热特性分析
Analysis of Thermal Characteristics of Semiconductor Laser Packaging Based on ANSYS Workbench
DOI: 10.12677/MP.2018.84025,
PDF,
被引量
科研立项经费支持
作者:
曹伟冬*, 冯 源, 晏长岭, 郝永芹, 李 洋, 闫 昊, 张家斌, 贾慧民, 吴胤禛:长春理工大学,吉林 长春
关键词:
半导体激光器;ANSYS Workbench;C-Mount;石墨烯;Semiconductor Lasers; ANSYS Workbench; C-Mount; Graphene
摘要:
通过对半导体激光器热特性的理论分析,使用ANSYS Workbench软件,模拟分析单管半导体激光器芯片温度和热流分布,输出功率为10 W时,传统c-mount封装芯片温度为66.393℃,热阻为4.6 K/W。通过在热沉与激光器芯片间添加一层高热导率的石墨烯,增加热流扩散面积,使芯片温度下降到55.587℃,热阻3.5 K/W,散热效果明显,计算得到最大输出功率从15.4 W提升到18.5 W,通过计算得知,其输出功率提升了20%。
Abstract:
Based on the theoretical analysis of the thermal characteristics of semiconductor lasers, the model of c-mount packaging is established by using ANSYS Workbench software. The temperature and heat flux distribution of single-tube semiconductor laser chips are simulated and analyzed. When the output power is 10 w, the temperature of traditional c-mount packaging chips is 66.393˚C, and thermal resistance is 4.6 k/w. By adding a layer of graphene with high thermal conductivity be-tween the heat sink and the laser chip, the heat flux diffusion area is increased; the temperature of the chip is reduced to 55.587˚C; the thermal resistance is 3.5 k/w; and the heat dissipation effect is obvious. The maximum output power is increased from 15.4 w to 18.5 w. It is found that the output power is increased by 20%.
文章引用:曹伟冬, 冯源, 晏长岭, 郝永芹, 李洋, 闫昊, 张家斌, 贾慧民, 吴胤禛. 基于ANSYS Workbench半导体激光器封装热特性分析[J]. 现代物理, 2018, 8(4): 232-238.
https://doi.org/10.12677/MP.2018.84025
参考文献
|
[1]
|
Lu, Y., Nie, Z., Zhang, P., et al. (2016) Numerical Simulation of Thermo-Mechanical Behavior in High Power Diode Laser Arrays. 17th International Conference on Electronic Packaging Technology, Wuhan, 16-19 August 2016, 76-83.
|
|
[2]
|
王狮凌, 房丰洲. 大功率激光器及其发展[J]. 激光与光电子学进展, 2017, 54(9): 45-58.
|
|
[3]
|
Pascoe, N. (2011) Reliability Technology: Principles and Practice of Failure Prevention in Electronic Systems. Studies in Phi-losophy & Education, 9, 313-329. [Google Scholar] [CrossRef]
|
|
[4]
|
范嗣强. 大功率半导体激光器热沉技术的研究现状[J]. 激光杂志, 2018(2): 14-19.
|
|
[5]
|
王文, 许留洋, 王云华, 等. 热沉尺寸对半导体激光器有源区温度的影响[J]. 半导体光电, 2013, 34(5).
|
|
[6]
|
杨宏宇, 刘林, 舒世立, 等. 大功率半导体激光器有源区温度影响因素分析[J]. 江苏科技大学学报(自然科学版), 2017, 31(2): 143-147.
|
|
[7]
|
张晓磊, 薄报学, 张哲铭, 等. C-mount封装激光器热特性分析与热沉结构优化研究[J]. 发光学报, 2017, 38(7): 891-896.
|
|
[8]
|
陆日, 许留洋, 高欣, 等. 电注入椭圆微腔半导体激光器热特性分析[J]. 中国激光, 2016(4): 42-47.
|
|
[9]
|
全伟, 李光慧, 陈熙, 等. 一体化半导体激光器的ANSYS热仿真及结构设计[J]. 光学精密工程, 2016, 24(5): 1080-1086.
|
|
[10]
|
Fan, W. and Liu, X. (2017) Advancement in High Thermal Conductive Graphite for Microelectronic Packaging. RF and Microwave Microelectronics Packaging II. Springer International Publishing.
|