随机掺杂对超深亚微米SOI MOSFETs阈值电压影响研究
Study on the Influence of Random Doping on the Threshold Voltage of Ultra Deep Submicron SOI MOSFETs
DOI: 10.12677/APP.2018.811060, PDF,    科研立项经费支持
作者: 苏亚丽*：西安石油大学，机械工程学院，陕西 西安；杨江江：西安交通大学，微电子学院，陕西 西安
关键词: SOI MOSFETs；阈值电压；随机掺杂；SOI MOSFETs； Threshold Voltage； Random Dopant Fluctuation
摘要: 本文研究随机掺杂引起的超深亚微米SOI MOSFETs器件阈值电压波动，提出一种由沟道粒子数目波动引起的阈值电压波动标准差的解析模型，计入了沟道粒子数目和位置变化所带来的阈值电压波动影响。通过研究不同参数下器件阈值电压变化情况，所建立模型计算的预测结果与Sentaurus TCAD数值模拟结果吻合良好。
Abstract: In this paper, the threshold voltage fluctuations of ultra-deep submicron SOI MOSFETs caused by random dopant fluctuation are studied. An analytical model of the standard deviation of threshold voltage fluctuation based on the number fluctuation of channel particles is proposed, which takes into account both the variation of the number and position of channel particles. By studying the threshold voltage variations under different parameters, the predicted results calculated by the model are in good agreement with the numerical simulation results of Sentaurus TCAD.
文章引用：苏亚丽, 杨江江. 随机掺杂对超深亚微米SOI MOSFETs阈值电压影响研究[J]. 应用物理, 2018, 8(11): 472-479. https://doi.org/10.12677/APP.2018.811060

参考文献

[1] 孔文. 全耗尽绝缘硅FD-SOI工艺技术的特点分析[J]. 集成电路应用, 2017, 34(11): 38-41.
[2] Sun, X., Moroz, V., Damrongplasit, N., et al. (2011) Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs. IEEE Transactions on Electron Devices, 58, 3294-3299. [Google Scholar] [CrossRef] 
[3] Mazurier, J., Weber, O., Andrieu, F., et al. (2011) On the Varia-bility in Planar FDSOI Technology: From MOSFETs to SRAM Cells. IEEE Transactions on Electron Devices, 58, 2326-2336. [Google Scholar] [CrossRef] 
[4] Markov, S., Cheng, B. and Asenov, A. (2012) Sta-tistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Ex-tensions.  IEEE Electron Device Letters, 33, 315-317. [Google Scholar] [CrossRef] 
[5] Chatzikyriakou, E., White, W.R. and Groot, C.H.D. (2017) Total Ionizing Dose, Random Dopant Fluctuations, and Its Combined Effect in the 45 nm PDSOI Node. Microelectronics Reliability, 68, 21-29. [Google Scholar] [CrossRef] 
[6] Lü, W., Wang, G. and Sun, L. (2015) Analytical Modeling of Cutoff Frequency Variability Reserving Correlations Due to Random Dopant Fluctuation in Nanometer MOSFETs. Solid-State Electron, 105, 63-69. [Google Scholar] [CrossRef] 
[7] Andrei, P. and Oniciuc, L. (2008) Suppressing Random Do-pant-Induced Fluctuations of Threshold Voltages in Semiconductor Devices. Journal of Applied Physics, 104, 1-10. [Google Scholar] [CrossRef] 
[8] Yasuda, Y., Takamiya, M. and Hiramoto, T. (2000) Separation of Effects of Statistical Impurity Number Fluctuations and Position Distribution on Vth Fluctuations in Scaled MOSFETs. IEEE Transactions on Electron Devices, 47, 1838-1842. [Google Scholar] [CrossRef] 
[9] Rao, R., DasGupta, N. and DasGupta, A. (2010) Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Thresh-old Voltage Model. IEEE Transactions on Device and Materials Reliability, 10, 247-253. [Google Scholar] [CrossRef] 
[10] Banna, S.R., Chan, P.C.H., Ko, P.K., et al. (1995) Threshold Voltage Model for Deep-Submicrometer Fully Depleted SOI MOSFET’s. IEEE Transactions on Electron Devices, 42, 1949-1955. [Google Scholar] [CrossRef] 

为你推荐