硅片化学机械抛光后存放方法探讨
Discussion on Storage Method of Silicon Wafer after Chemical Mechanical Polishing
摘要:
化学机械抛光后的硅片,都会在去离子水中浸泡一段时间才会做后面的最终清洗。但浸泡时间和浸泡条件会影响到最终的清洗效果。本文研究了不同浸泡条件下,硅片经过最终清洗后表面颗粒的变化。
Abstract:
The chemical mechanical polishing silicon wafers will be soaked in deionized water for a period of time before the final cleaning. However, the soaking duration and the soaking condition could affect the final cleaning effect. In this article, the change of surface particles of silicon wafers which after the final cleaning in different soaking conditions is researched.
参考文献
|
[1]
|
Malik, F. and Hesan, M. (1995) Manufacturablilty of CMP Process. Thin Solid Films, 270, 612-615. [Google Scholar] [CrossRef]
|
|
[2]
|
刘玉林, 汪心想, 孟新志. 半导体硅片CMP后清洗技术的研究进展[J]. 清洗世界, 2018(5): 32-36.
|
|
[3]
|
刘玉岭, 桑建新, 叶占江, 等. 表面活性剂对硅片表面吸附颗粒的作用[J]. 半导体技术, 2001, 26(7): 59-61.
|
|
[4]
|
程铸生. 精细化学品化学[M]. 修订版. 上海: 华东理工大学出版社, 1996.
|
|
[5]
|
刘玉岭, 檀柏梅, 赵之雯. 表面活性剂在半导体硅材料加工技术中的应用[J]. 河北工业大学学报, 200, 33(2): 72-75.
|