取向ZnO/Cu2O纳米异质结阵列的制备及光电特性研究
Fabrication and Photoelectric Properties of Aligned ZnO/Cu2O Core-Shell Heterojunction Nanowire Arrays
DOI: 10.12677/NAT.2019.91001, PDF,    国家自然科学基金支持
作者: 赵佳佳, 周施彤, 吕东徽, 郭佳盈, 刘丹妮, 李梦轲*：辽宁师范大学，物理与电子技术学院，辽宁 大连
关键词: ZnO；Cu2O；纳米半导体；异质结；ZnO； Cu2O； Nano Semicondoutor； Heterostructures
摘要: 采用电化学沉积法制备了取向ZnO/Cu2O异质结阵列。通过FESEM、XRD、XPS、PL、IV特性测试等手段对形成的纳米异质结的形貌、晶体结构、化学成份、光致发光、IV特性和光电转换特性等进行了分析讨论。结果表明，沉积时间及沉积电压是影响制备高质量ZnO/Cu2O核壳异质结阵列的关键因素。异质结的Cu2O包覆层厚度约为15~25 nm，主要由单晶纳米晶粒构成，晶粒细致。测试发现，相对于纯ZnO纳米线阵列，ZnO/Cu2O异质结阵列的紫光发光峰强度有所减弱，绿光峰强度有所增强，且绿光峰的中心峰位还出现了20~30 nm的红移现象。同时，ZnO/Cu2O异质结阵列还表现出了较好的光电响应特性。
Abstract: Aligned ZnO/Cu2O core-shell heterostructure nanowire arrays were synthesized by electrochemical depositing process. The morphology, microstructure, chemical composition, photolumiescence, IV characteristic and photoelectric properties of the synthesized heterojunction samples were analyzed by means of various testing instruments, respectively. The results show that the depo-siting time and voltage are the key factors for the fabrication of ZnO/Cu2O heterojunction arrays. The SEM images show the Cu2O shells are comprised of single-crystalline numerous nanoparticles with a thickness of around 15 - 25 nm. Compared with the pure ZnO nanowire array, the photolu-minescence intensity of the purple light peak in ZnO/Cu2O heterojunction arrays was eliminated, but the green light peak was increased with the increase of deposition voltage and deposition time. Meanwhile, the red shift phenomenon of 20 - 30 nm is observed at the green peak. An improved photoelectric property of ZnO/Cu2O heterojunction samples is demonstrated.
文章引用：赵佳佳, 周施彤, 吕东徽, 郭佳盈, 刘丹妮, 李梦轲. 取向ZnO/Cu2O纳米异质结阵列的制备及光电特性研究[J]. 纳米技术, 2019, 9(1): 1-9. https://doi.org/10.12677/NAT.2019.91001

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