电子束蒸镀法制备硫化镉薄膜光探测器

Fabrication of CdS Film-Based Photodetector by Electron Beam Evaporation Method

摘要: 采用电子束蒸镀法在SiO₂/Si基底上蒸镀厚度为100 nm的硫化镉薄膜，然后利用掩膜版蒸镀电极，成功制备出了硫化镉薄膜光探测器。运用XRD、XPS和AFM对硫化镉薄膜进行了表征，结果表明所制备的薄膜具有非常好的致密性和良好的结晶性。光响应测试表明，所构筑的硫化镉薄膜光探测器光响应性能优异，在功率为1 mW/cm²，波长为365 nm紫外光照射下的响应度达到22 A/W，同时也其可重复性进行了验证。该工作表明电子束蒸镀法是一种有效制备薄膜光探测器的手段。

Abstract: CdS films-based photodetectors were successfully fabricated by depositing CdS films with thickness of 100 nm on SiO₂/Si substrate in combination with evaporating the Au/Cr electrodes using the shadow mask. The as-produced CdS films were characterized by XRD, XPS and AFM and the results show that CdS films possess excellent compactness and good crystallinity. The photoresponse test shows that the CdS films based photodetectors has excellent photoresponse performance, and possess a responsivity up to 22 A/W under the ultraviolet irradiation with a power of 1 mW/cm² and a wavelength of 365 nm. At the same time, its repeatability is verified. This work confirms that electron beam evaporation method is an effective approach for the fabrication of high-performance film-based photodetectors.