三维集成电路中硅通孔电阻参数计算解析式提取的研究
Study on Extracting Analytical Formula for TSV Resistance Parameter Calculation in 3D IC
DOI: 10.12677/OJCS.2020.93008, PDF,   
作者: 鞠艳杰：大连交通大学电气信息工程学院，辽宁 大连
关键词: TSV；3D IC；参数提取；TSV； 3D IC； Parameter Extraction
摘要: 硅通孔技术是三维集成电路实现层间垂直互连的关键，使三维集成电路具有连线短、尺寸小、功耗低、可异构等优点。作为三维集成电路中互连的硅通孔，其寄生参数的提取将直接影响到集成电路功耗，时延，噪声等方面的性能，因此硅通孔寄生参数提取对高性能芯片的成功设计具有十分重要意义。本文以高面率比圆柱硅通孔为研究对象，通过对不同尺寸参数下的圆柱硅通孔进行仿真，得到其电阻参数值，使用电磁场理论、曲线拟合方法，推导出高精度的电阻参数提取解析式。解析式可快速准确计算硅通孔的电阻参数值，大大提高了参数提取效率。
Abstract: TSV technology is the key factor of realizing interlayer vertical interconnection in 3D IC and it brings such advantages to 3D IC as short wiring, small size, low power consumption and heterogeneous feature, etc. As the interconnected TSV in 3D IC, its parasitic parameter extraction will directly in-fluence IC performance in power consumption, time delay and noise, etc. Therefore, extracting TSV parasitic parameter is significant for successful design of a high-performance chip. This paper uses the cylinder TSV with high surface ratio as study subject. By simulating cylinder TSV of different dimension parameters, we obtain a resistance parameter value. The high-precision analytical formula for resistance parameter extraction is derived from electromagnetic field theory and curve fitting method. The analytic formula is able to rapidly and precisely calculate TSV resistance parameter value to largely improve parameter extraction efficiency.
文章引用：鞠艳杰. 三维集成电路中硅通孔电阻参数计算解析式提取的研究[J]. 电路与系统, 2020, 9(3): 55-60. https://doi.org/10.12677/OJCS.2020.93008

参考文献

[1] 邱碧秀. 微系统封装原理与技术[M]. 北京: 电子工业出版社, 2006.
[2] Guarini, K.W. and TOPol, A.W. (2002) Electrical Integrity of State-of-the-Art 0.13 um SOI CMOS Devices and Circuits Transferred for Three-Dimensional (3D) Integrated Circuit (IC) Fabrication. The International Electron Devices Meeting, Hong Kong, 22 June 2002, 943-945.
[3] Sakuma, K., Andry, P.S. and Tsang, C.K. (2008) 3D Chip-Stacking Technology with Through-Silicon Vias and Low-Volume Lead-Free Interconnections. IBM Journal of Research and Development, 52, 614-622. [Google Scholar] [CrossRef] 
[4] Motoyoshi, M. (2009) Through-Silicon Via (TSV). Proceedings of the IEEE, 97, 43-48. [Google Scholar] [CrossRef] 
[5] Koyanagi, M. and Fukushima, T. (2009) High-Density through Silicon Vias for 3-D LSIs. Proceedings of the IEEE, 97, 49-59. [Google Scholar] [CrossRef] 
[6] Pavlidis, V.F. and Friedman, E.G. (2009) Interconnect-Based Design Methodologies for Three-Dimensional Integrated Circuits. Proceedings of the IEEE, 97, 123-139. [Google Scholar] [CrossRef] 
[7] Wong, B.P., Anurang, M. and Cao, Y. (2004) Nano-Cmos Circuit and Physical Design. John Wiley & Sons, New York. [Google Scholar] [CrossRef] 
[8] Micael, J.T. and Jin, K. (1991) A Hybrid Method for the Calculation of the Resistance and Inductance of Transmission Lines with Arbitrary Cross Sections. Microwave Theory and Techniques, 39, 1338-1342. [Google Scholar] [CrossRef] 
[9] Clayton, R.P. (1994) Analysis of Multiconductor Transmission Lines. John Wiley & Sons, New York.
[10] Khalil, D.E., Ismail, Y., Khellah, M. and Karnik, T. (2008) Analytical Model for the Propagation Delay of Through Silicon Vias. 9th International Symposium on Quality Electronic Design, San Jose, CA, 17-19 March 2008, 553-556. [Google Scholar] [CrossRef] 
[11] Savidis, I. and Friedman, E.G. (2009) Closed-Form Expres-sions of 3-D Via Resistance, Inductance and Capacitance. IEEE Transactions on Electron Devices, 56, 1873-1881. [Google Scholar] [CrossRef] 
[12] Liang, Y.J. and Li, Y. (2011) Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon Vias. IEEE Electron Device Letters, 32, 393-395. [Google Scholar] [CrossRef] 
[13] Khaled, S., Ragai, H., Amin, K., et al. (2011) Compact Lumped Element Model for TSV in 3D-ICS. IEEE, 2321-2324.
[14] Salah, K., El Rouby, A., Ragai, H., et al. (2012) A Closed Form Expression for TSV Based on Chip Spiralinductor. 2012 IEEE International Symposium on Circuits and Systems (ISCAS), Seoul, 20-23 May 2012, 2325-2328. [Google Scholar] [CrossRef]