氮化铝陶瓷的制备及研究进展
Research Status and Development of Aluminum Nitride Ceramics
DOI: 10.12677/MS.2021.117098, PDF,    科研立项经费支持
作者: 宋志健, 刘世凯*, 陈颖鑫, 孙亚光*：河南工业大学，材料科学与工程学院，河南 郑州；黄 威, 徐天兵：连云港市沃鑫高新材料有限公司，江苏 连云港
关键词: 氮化铝陶瓷；成型；烧结；AlN； Molding； Sintering
摘要: 氮化铝(AlN)陶瓷具有优良的热导率、电绝缘性能和介电性能，最重要的是其与硅的热膨胀系数相近，是较为理想的可用于基板和电子器件封装的半导体材料。本文综述了氮化铝的性能、陶瓷成型、烧结等
Abstract: Aluminum nitride (AlN) ceramics have excellent thermal conductivity, electrical insulation and dielectric properties. The most important thing is that its thermal expansion coefficient is close to that of silicon, so it is an ideal semiconductor material to be used for substrate and electronic device packaging. In this paper, the properties, ceramic molding, sintering and other technologies of aluminum nitride are reviewed, and the development direction of aluminum nitride ceramics is discussed.
文章引用：宋志健, 刘世凯, 黄威, 徐天兵, 陈颖鑫, 孙亚光. 氮化铝陶瓷的制备及研究进展[J]. 材料科学, 2021, 11(7): 848-854. https://doi.org/10.12677/MS.2021.117098

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