|
[1]
|
Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Pearton, S.J., Ren, F., Chernykh, A.V., et al. (2018) Hole Traps and Persistent Photocapacitance in Proton Irradiated β-Ga2O3 Films Doped with Si. APL Materials, 6, Article ID: 096102. [Google Scholar] [CrossRef]
|
|
[2]
|
Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Vasilev, A.A., Yakimov, E.B., Chernykh, A.V., et al. (2020) Pulsed Fast Reactor Neutron Irradiation Effects in Si Doped N-Type β-Ga2O3. Journal of Physics D: Applied Physics, 53, Article ID: 274001. [Google Scholar] [CrossRef]
|
|
[3]
|
Bhuiyan, A.F.M.A.U., Feng, Z., Huang, H., Meng, L., Hwang, J. and Zhao, H. (2021) Metalorganic Chemical Vapor Deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 Thin Films on M-Plane Sapphire Substrates. APL Materials, 9, Article ID: 101109. [Google Scholar] [CrossRef]
|
|
[4]
|
Liu, X., Wang, H., Chiu, H., Chen, Y., Li, D., Huang, C., et al. (2020) Analysis of the Back-Barrier Effect in AlGaN/GaN High Electron Mobility Transistor on Free-Standing GaN Substrates. Journal of Alloys and Compounds, 814, Article ID: 152293. [Google Scholar] [CrossRef]
|
|
[5]
|
Bae, J., Kim, H.W., Kang, I.H. and Kim, J. (2020) Dual-Field Plated β-Ga2O3 nano-FETs with an Off-State Breakdown Voltage Exceeding 400 V. Journal of Materials Chemistry C, 8, 2687-2692. [Google Scholar] [CrossRef]
|
|
[6]
|
Zhang, H., Yuan, L., Tang, X., Hu, J., Sun, J., Zhang, Y., et al. (2020) Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs. IEEE Transactions on Power Electronics, 35, 5157-5179. [Google Scholar] [CrossRef]
|
|
[7]
|
Farzana, E., Chaiken, M.F., Blue, T.E., Arehart, A.R. and Ringel, S.A. (2018) Impact of Deep Level Defects Induced by High Energy Neutron Radiation in β-Ga2O3. APL Materials, 7, Article ID: 022502. [Google Scholar] [CrossRef]
|
|
[8]
|
Sun, R., Chen, X., Liu, C., Chen, W. and Zhang, B. (2021) Degradation Mechanism of Schottky P-GaN Gate Stack in GaN Power Devices under Neutron Irradiation. Applied Physics Letters, 119, Article ID: 133503. [Google Scholar] [CrossRef]
|
|
[9]
|
Lei, Z., Guo, H., Tang, M., Zeng, C., Chen, H. and Zhang, Z. (2016). Heavy Ions Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors. 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Bremen, 19-23 September 2016, 1-4.[CrossRef]
|
|
[10]
|
Holmes-Siedle, A. and Adams, L. (2002) Handbook of Radiation Effects. Oxford University Press.
|
|
[11]
|
Yang, G., Jang, S., Ren, F., Pearton, S.J. and Kim, J. (2017) Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors. ACS Applied Materials & Interfaces, 9, 40471-40476. [Google Scholar] [CrossRef] [PubMed]
|
|
[12]
|
Ai, W., Liu, J., Feng, Q., Zhai, P., Hu, P., Zeng, J., et al. (2021) Degradation of β-Ga2O3 Schottky Barrier Diode under Swift Heavy Ion Irradiation. Chinese Physics B, 30, 056110. [Google Scholar] [CrossRef]
|
|
[13]
|
Zhang, Z., Lei, Z., Tong, T., Li, X., Xi, K., Peng, C., et al. (2019) Tibetan-Plateau-Based Real-Time Testing and Simulations of Single-Bit and Multiple-Cell Upsets in QDRII+ SRAM Devices. IEEE Transactions on Nuclear Science, 66, 1368-1373. [Google Scholar] [CrossRef]
|
|
[14]
|
Lorenz, K., Marques, J.G., Franco, N., Alves, E., Peres, M., Correia, M.R., et al. (2008) Defect Studies on Fast and Thermal Neutron Irradiated GaN. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266, 2780-2783. [Google Scholar] [CrossRef]
|
|
[15]
|
Lü, L., Hao, Y., Zheng, X., Zhang, J., Xu, S., Lin, Z., et al. (2012) Proton Irradiation Effects on HVPE GaN. Science China Technological Sciences, 55, 2432-2435. [Google Scholar] [CrossRef]
|
|
[16]
|
Wang, R.X., Xu, S.J., Fung, S., Beling, C.D., Wang, K., Li, S., et al. (2005) Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers. Applied Physics Letters, 87, Article ID: 031906. [Google Scholar] [CrossRef]
|
|
[17]
|
Lazanu, I. and Lazanu, S. (2005) Silicon Detectors: From Radiation Hard Devices Operating Beyond LHC Conditions to Characterization of Primary Fourfold Coordinated Vacancy Defects. Romanian Reports in Physics, 57, 342-348.
|
|
[18]
|
Allison, J., Amako, K., Apostolakis, J., Arce, P., Asai, M., Aso, T., et al. (2016) Recent developments in GEANT4. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 835, 186-225. [Google Scholar] [CrossRef]
|
|
[19]
|
Konoplev, V., Caturla, M.J., Abril, I. and Gras-Marti, A. (1994) Bulk Atomic Relocation in Low-Energy Collision Cascades in Silicon: Molecular Dynamics versus Monte Carlo Simulations. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 90, 363-368. [Google Scholar] [CrossRef]
|