基于CsPbBr3钙钛矿薄膜忆阻器的人工突触
Artificial Synapses Based on the CsPbBr3 Perovskite Thin Film Memristor
DOI: 10.12677/app.2024.1410075, PDF,  被引量   
作者: 张王蔓：广东工业大学物理与光电工程学院，广东 广州
关键词: 忆阻器；卤化物钙钛矿；CsPbBr₃；人工突触；Memristor； Halide Perovskite； CsPbBr3； Artificial Synapses
摘要: 随着信息时代的到来，数据的爆炸式增长使得传统的冯诺依曼计算系统在存储和计算效率方面均面临着巨大挑战。受人脑神经网络的启发，面向存算一体的电子器件具有很好的发展前景。忆阻器作为一种新兴的人工突触器件，能够根据施加电压或电流的历史保持内阻状态，实现生物突触功能和神经形态计算。文章制备了一种基于卤化物钙钛矿CsPbBr3的人工突触。采用溶胶–凝胶法制备了CsPbBr3薄膜，并通过旋涂退火获得了Au/CsPbBr3/ITO结构的人工突触，其学习记忆行为与生物神经元相似。此外，突触可塑性也得到了证实，包括短期突触可塑性和长期突触可塑性。
Abstract: With the advent of the information age, the explosive growth of data makes the traditional von Neumann computing system face great challenges in terms of storage and computing efficiency. Inspired by human brain neural network, electronic devices for memory and computer integration have a good development prospect. As a new kind of artificial synaptic device, memristor can maintain the internal resistance state according to the history of applied voltage or current, and realize the synaptic function and neuromorphic calculation. In this paper, an artificial synapse based on halide perovskite CsPbBr3 is prepared. CsPbBr3 films were prepared by sol-gel method, and Au/CsPbBr3/ITO structures were obtained by spinning annealing. The learning and memory behavior of CsPbBr3 was similar to that of biological neurons. In addition, synaptic plasticity has been demonstrated, including short-term plasticity and long-term plasticity.
文章引用：张王蔓. 基于CsPbBr3钙钛矿薄膜忆阻器的人工突触[J]. 应用物理, 2024, 14(10): 705-712. https://doi.org/10.12677/app.2024.1410075

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