作者:
O Nakatsuka，T Takei，Y Koide，M Murakami
关键词:
silicon carbide ； titanium ； aluminum ； Ohmic contact ； silicide ； carbide
摘要:
The effect of the Al concentration and layer structure on the electrical and microstructural properties of TiAl Ohmic contacts for p-type 4H-SiC were investigated. The Al concentration was found to effect strongly on these contact properties, and the specific contact resistance of 1 × 10
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