作者:
M Mysliwiec，M Sochacki，R Kisiel，M Guziewicz，M Wzorek
关键词:
aluminium alloys ； contact resistance ； crystal morphology ； electrical resistivity ； metallic thin films ； metallisation ； ohmic contacts ； rapid thermal annealing ； scanning electron microscopy ； semiconductor-metal boundaries
摘要:
Titanium-aluminum alloys were successfully used to form low resistance ohmic contacts to p-type SiC. This work concerns two Al-Ti alloy compositions. Contacts were prepared by magnetron sputtering of bilayer Al-Ti and trilayer Ti-Al-Ti thin films and rapid thermal annealing at temperatures range 900°C ÷ 1000°C. Using scanning electron microscopy and profiler, an investigation of surface morphology of annealed contacts was conducted. The best resistivity of 5.8·10Ωcmwas attained on 100nm/26nm Al/Ti metallization of 80% at. Al alloy composition annealed at 1000°C for 2 min. Relatively low roughness of 30 nm was observed on trilayer Ti/Al/Ti metallization.
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