《Journal of Applied Physics》

Modified Deal Grove Model for the Thermal Oxidation of Silicon Carbide

作者:
Y SongS DharLC FeldmanG Chung

关键词:
crystal faces oxidation silicon compounds wide band gap semiconductors 8105Hd 8165Mq

摘要:
a faces, which are performed in 1 atm dry oxygen and in the temperature range 950–115065°C. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed. 08 2004 American Institute of Physics.

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