作者:
Y Song,S Dhar,LC Feldman,G Chung
关键词:
crystal faces ;oxidation ;silicon compounds ;wide band gap semiconductors ;8105Hd ;8165Mq
摘要:
a faces, which are performed in 1 atm dry oxygen and in the temperature range 950–115065°C. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed. 08 2004 American Institute of Physics.
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